Infineon power electronics packaging sets standard for high-current capability, efficiency

January 30, 2012  by  

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Infineon Technologies AG has introduced an innovative package technology that provides high-current capability and high efficiency for demanding automotive electronics applications, including electric and hybrid vehicles.

The new TO package is compliant with JEDEC standard H-PSOF (Heatsink Plastic Small Outline Flat lead). The first available products using the H-PSOF package technology are 40V OptiMOS™ T2 power transistors offering up to 300A current capability and R DS(on) values of 0.76mΩ. Infineon describes those specifications as a new milestone.

The main goal for the development of the H-PSOF package was to decrease the package resistance and increase the current capability of the package compared to the D 2PAK offering high-current capabilities. The overall dimensions and the height of the H-PSOF package are reduced compared to a standard D 2PAK package (TO-263). The footprint of the H-PSOF package is about 20 percent smaller and its height is almost half that of the current D 2PAK package.

Higher performance power electronics components contribute to better fuel efficiency and  lower emissions. Power MOSFETs with current capability above 200A and R DS(on) below 1mΩ are needed to reduce conduction losses and improve overall efficiency. Until now, MOSFETs to fulfill these needs have not been available in the automotive market.

The H-PSOF package will enable automotive electronics manufacturers to better serve the market for high-current applications such as battery management for hybrid vehicles as well as Electric Power Steering (EPS), active alternators and other heavy load applications enabling higher efficiency and lower emissions. Automotive EPS and start/stop systems are growing application area, according to  the market research firm Strategy Analytics. These will grow from about 47 million units in the year 2011 to about 110 million units in the year 2016, at a compound average annual growth rate of about 19 percent.

The H-PSOF package also offers assembly and manufacturing advantages. Its special design ensures a good wetting for reliable soldering and it is possible to control the soldered leads by using Automatic Optical Inspection (AOI) which is usually part of a Surface Mount Technology (SMT) production line.


The first available product using the H-PSOF package is the IPLU300N04S4-R7, a member of the 40V OptiMOS T2 automotive power transistor family from Infineon, which is the benchmark for applications in energy efficiency, CO2 reduction, and electric drives. The IPLU300N04S4-R7 offers a continuous drain current (I D) of 300A with R DS(on) of 0.76mΩ. The power devices in the H-PSOF package are qualified according to AEC-Q101 standards. Infineon plans to introduce further 40V and 30V automotive MOSFETs using the H-PSOF package technology.

Further information

Further information on Infineon’s automotive MOSFETs and automotive semiconductor portfolio are available at and at

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